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Proceedings Paper

Power broadening of coherent energy transfer in semiconductor gain media
Author(s): Curtis W. Lowry; Galina Khitrova; Francois Brown de Colstoun; A. E. Paul; Hyatt M. Gibbs; Jeffrey W. Grantham; Ruxiang Jin; Deepak Boggavarapu; Stephan W. Koch; Murray Sargent III; Thomas M. Brennan; B. Eugene Hammons
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Paper Abstract

Coherent energy transfer gives rise to a new peak and dip in the probe gain spectrum that move proportionally with the intracavity injected power, showing that stimulated emission and absorption significantly speed up the semiconductor response.

Paper Details

Date Published: 10 August 1994
PDF: 12 pages
Proc. SPIE 2095, Laser Physics, (10 August 1994); doi: 10.1117/12.183096
Show Author Affiliations
Curtis W. Lowry, Optical Sciences Ctr./Univ. of Arizona (United States)
Galina Khitrova, Optical Sciences Ctr./Univ. of Arizona (United States)
Francois Brown de Colstoun, Optical Sciences Ctr./Univ. of Arizona (United States)
A. E. Paul, Univ. of Iowa (United States)
Hyatt M. Gibbs, Optical Sciences Ctr./Univ. of Arizona (United States)
Jeffrey W. Grantham, Air Force Research Lab. (United States)
Ruxiang Jin, Optical Sciences Ctr./Univ. of Arizona (United States)
Deepak Boggavarapu, Optical Sciences Ctr./Univ. of Arizona (United States)
Stephan W. Koch, Optical Sciences Ctr./Univ. of Arizona (United States)
Murray Sargent III, Optical Sciences Ctr./Univ. of Arizona (United States)
Thomas M. Brennan, Sandia National Labs. (United States)
B. Eugene Hammons, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 2095:
Laser Physics
Artur A. Mak, Editor(s)

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