Proceedings Paper
Amplification of submillimeter radiation due to optical transitions between shallow acceptor states in semiconductors| Format | Member Price | Non-Member Price |
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Paper Abstract
Theoretical proposals concerning submillimeter and far-infrared activity based on shallow acceptors states optical transitions in p-Ge and p-Si semiconductors are discussed. Preliminary experimental investigations will be presented.
Paper Details
Date Published: 19 August 1994
PDF: 7 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183061
Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)
PDF: 7 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183061
Show Author Affiliations
Valery N. Shastin, Institute of Applied Physics (Russia)
Andrei V. Muravjov, Institute of Applied Physics (Russia)
Andrei V. Muravjov, Institute of Applied Physics (Russia)
Ekaterina E. Orlova, Institute of Applied Physics (Russia)
Sergei G. Pavlov, Institute of Applied Physics (Russia)
Sergei G. Pavlov, Institute of Applied Physics (Russia)
Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)
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