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Proceedings Paper

Low compensation impurity band photoconductors
Author(s): S. Pasquier; G. Sirmain; Claude Meny; A. G. Murray; Matthew J. Griffin; Peter A. R. Ade; L. Essaleh; J. Galibert; Jean Leotin
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Paper Abstract

Low compensation thin layer of antimony doped silicon impurity band photoconductors doped at the level 1017 - 1018 cm-3 are evaluated in moderate background photon flux in the range of 1012 s-1 with the goal to approach photon noise limitation operation in spectral ranges near 300 cm-1. Blocked impurity band photodetectors based on the same active layer geometry and thickness than the photoconductors were also implemented and measured. Spectral features including cut off wavenumbers specific to impurity band effects are investigated as a function of electric field and temperature. Spectroscopic evidence for a giant gain mechanism for photoelectrons excited from residual impurities in the blocking layer of BIB structure is found. Figures of merit of both IB and BIB elements were measured and physical mechanisms underlying the limitation of their performances are outlined.

Paper Details

Date Published: 19 August 1994
PDF: 15 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183058
Show Author Affiliations
S. Pasquier, LPST-SNCMP (France)
G. Sirmain, LPST-SNCMP (France)
Claude Meny, LPST-SNCMP (France)
A. G. Murray, Queen Mary and Westfield College (United Kingdom)
Matthew J. Griffin, Queen Mary and Westfield College (United Kingdom)
Peter A. R. Ade, Queen Mary and Westfield College (United Kingdom)
L. Essaleh, LPST-SNCMP (France)
J. Galibert, LPST-SNCMP (France)
Jean Leotin, LPST-SNCMP (France)

Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)

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