Proceedings Paper
Laser generation mechanism of submillimeter range electromagnetic oscillations on p-n junction| Format | Member Price | Non-Member Price |
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Paper Abstract
The longitudinal oscillation in an inhomogeneous (p- and n-regions) semiconductor plasma of a p-n junction have been investigated theoretically. It is shown that in a forward biased p-n junction the instability of oscillations can be arised due to the stimulated coupled plasmon emission by injected electrons. The condition on the parameters of a p-n junction and on external circuit, which lead to the generation of submillimeter range oscillations (coupled plasmons), have been formulated.
Paper Details
Date Published: 19 August 1994
PDF: 5 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183018
Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)
PDF: 5 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183018
Show Author Affiliations
Vladimir M. Yakovenko, Institute of Radiophysics and Electronics (Ukraine)
Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)
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