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Proceedings Paper

Fabrication and performances of pseudomorphic high-electron-mobility transistor (PHEMT) Ka-band three-stage amplifiers for phased-array applications
Author(s): Paul Saunier; Hua Quen Tserng
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Paper Abstract

A 100-200-400 micrometers pHEMT monolithic amplifier has been developed for Ka-Band operation. This amplifier has achieved the state-of-the-art efficiency of 40% with 235 mW output power and 20.7 dB gain at 31 GHz. Two other circuits with 50-100-200 micrometers and 50-100-250 micrometers gate width have been fabricated in quantity of 100 to 200. This has been made possible by the advance of new fabrication techniques such as RIE dry recess with etch-stop layer which insures uniformity across full three-inch wafers. Amplifiers of this type are being used in a prototype phased-array antenna.

Paper Details

Date Published: 19 August 1994
PDF: 9 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.182992
Show Author Affiliations
Paul Saunier, Texas Instruments Inc. (United States)
Hua Quen Tserng, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)

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