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Proceedings Paper

High-electron-mobility transistors (HEMTs) for millimeter wave applications
Author(s): Jun-Ichiro Nikaido; Soshi Omura; Junji Saito
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Paper Abstract

Using advanced epitaxy and process technologies, we fabricated a planar-doped AlGaAs/GaAs HEMT with gates 0.1 micrometers long. At 12 GHz, the device had a noise figure (NF), including the package loss, of 0.50 dB with an associated gain (Gas) of 13.0 dB. This is, to our knowledge, the lowest NF at 12 GHz reported for AlGaAs/GaAs HEMTs. For GaAs-based InGaP/InGaAs HEMTs, we obtained a NF, including the package loss, of 0.41 dB at 12 GHz with a Gas of 13.0 dB, and a NF of 1.2 dB at 50 GHz with a Gas of 5.8 dB. These high-performance GaAs- based HEMTs are widely used at microwave frequencies. Millimeter wave applications also require low-cost high-performance HEMTs.

Paper Details

Date Published: 19 August 1994
PDF: 6 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994);
Show Author Affiliations
Jun-Ichiro Nikaido, Fujitsu Quantum Devices Ltd. (Japan)
Soshi Omura, Fujitsu Ltd. (Japan)
Junji Saito, Fujitsu Quantum Devices Ltd. (Japan)

Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)

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