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Proceedings Paper

Electro-optic power control of a millimeter wave Gaussian beam
Author(s): Guillermo F. Delgado; Joakhim F. Johansson
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Paper Abstract

The use of a molecular beam epitaxy (MBE) engineered III-V semiconductor to quasioptically modulate a millimeter wave Gaussian beam is presented. The effect is based on the generation of excess carrier densities under photonic excitation of the material. Low light power densities are required due to the high recombination lifetime achieved in the used material. A modulation depth of more than 15 dB and a dark insertion loss of less that 0.5 dB has been obtained at 100 GHz.

Paper Details

Date Published: 19 August 1994
PDF: 9 pages
Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.182983
Show Author Affiliations
Guillermo F. Delgado, Chalmers Univ. of Technology (Sweden)
Joakhim F. Johansson, Chalmers Univ. of Technology (Sweden)


Published in SPIE Proceedings Vol. 2211:
Millimeter and Submillimeter Waves
Mohammed N. Afsar, Editor(s)

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