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Proceedings Paper

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping
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Paper Abstract

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

Paper Details

Date Published: 1 May 1990
PDF: 8 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18293
Show Author Affiliations
Donald L. McDaniel Jr., Univ. of New Mexico (United States)
John Gerard McInerney, Univ. of New Mexico (United States)
M. Yasin Akhtar Raja, Univ. of New Mexico (United States)
Christian F. Schaus, Univ. of New Mexico (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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