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Proceedings Paper

High-power GaAlAs single-element lasers with nonabsorbing mirrors
Author(s): Ken Hamada; H. Naito; M. Kume; Masaaki Yuri; Hirokazu Shimizu
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Paper Abstract

A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2000 hours at 60 C.

Paper Details

Date Published: 1 May 1990
PDF: 9 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18247
Show Author Affiliations
Ken Hamada, Matsushita Electronics Corp. (Japan)
H. Naito, Matsushita Electronics Corp. (Japan)
M. Kume, Matsushita Electronics Corp. (Japan)
Masaaki Yuri, Matsushita Electronics Corp. (Japan)
Hirokazu Shimizu, Matsushita Electronics Corp. (Japan)

Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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