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Proceedings Paper

Strained-layer quantum well lasers grown by molecular beam epitaxy for longer wavelength high-speed applications
Author(s): William J. Schaff; Stephen D. Offsey; Paul J. Tasker; Lester Fuess Eastman; S. McKernan; C. B. Carter
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Paper Abstract

Strained layer GaInAs graded-index separate-confinement heterostructure quantum well lasers grown by molecular beam epitaxy (MBE) are now demonstrating performance comparable to, or superior to, those grown by organometallic vapor phase epitaxy. The improvement in performance of the MBE grown lasers is largely due to optimized growth conditions which result from previous studies of the growth of strained layer channels for strained modulation doped field effect transistors. In this presentation, discussion covers the range of growth conditions for strained layer GaInAs/GaAs structures, the properties of these strained layer materials, and the dc and microwave performance of lasers fabricated from layers grown under these conditions.

Paper Details

Date Published: 1 May 1990
PDF: 12 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18240
Show Author Affiliations
William J. Schaff, Cornell Univ. (United States)
Stephen D. Offsey, Cornell Univ. (United States)
Paul J. Tasker, Cornell Univ. (Germany)
Lester Fuess Eastman, Cornell Univ. (United States)
S. McKernan, Cornell Univ. (United States)
C. B. Carter, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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