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Proceedings Paper

Characterization of CdS-CdS1-xSex strained layer superlattices by photoluminescence measurements
Author(s): Youming Lu; Baojun Yang; Z. P. Guan; Lian Chun Chen; Ai Hui Yang; W. S. Li; Xiwu Fan
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Paper Abstract

CdS-CdS1-xSex SLSs were grown on (111) GaAs substrates by MOCVD, and their characteristics were analyzed by PL measurements. Luminescence results show that the band-gap of superlattice can be controlled by changing compositions, and crystalline quality of SLSs can be improved by controlling composition and inducing buffer layer. This indicates that the PL spectrum is more sensitive to investigate the structure of SLSs.

Paper Details

Date Published: 5 August 1994
PDF: 3 pages
Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182177
Show Author Affiliations
Youming Lu, Changchun Institute of Physics (China)
Baojun Yang, Changchun Institute of Physics (China)
Z. P. Guan, Changchun Institute of Physics (China)
Lian Chun Chen, Changchun Institute of Physics (China)
Ai Hui Yang, Changchun Institute of Physics (China)
W. S. Li, Changchun Institute of Physics (China)
Xiwu Fan, Changchun Institute of Physics (China)

Published in SPIE Proceedings Vol. 2321:
Second International Conference on Optoelectronic Science and Engineering '94
Wang Da-Heng; Anna Consortini; James B. Breckinridge, Editor(s)

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