Proceedings Paper
Optical endpoint detection of plasma etching and RIE for LSI circuits| Format | Member Price | Non-Member Price |
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Paper Abstract
This paper describes briefly importance of endpoint detection of the plasma etching and reactive-ion etching for LSI and VLSI circuits. The monitoring principle, design ideal and construction of the instrument for endpoint monitoring are described in the paper and monitoring results on line have been given. Finally the paper will discuss the load effect of the plasma etching and laser lateral interference influenced on monitor precision.
Paper Details
Date Published: 5 August 1994
PDF: 3 pages
Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182173
Published in SPIE Proceedings Vol. 2321:
Second International Conference on Optoelectronic Science and Engineering '94
Wang Da-Heng; Anna Consortini; James B. Breckinridge, Editor(s)
PDF: 3 pages
Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182173
Show Author Affiliations
Baoyong Mi, Changchun Institute of Optics and Fine Mechanics (China)
Kefei Song, Changchun Institute of Optics and Fine Mechanics (China)
Kefei Song, Changchun Institute of Optics and Fine Mechanics (China)
De-Fu Hao, Changchun Institute of Optics and Fine Mechanics (China)
Qingying Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Qingying Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Published in SPIE Proceedings Vol. 2321:
Second International Conference on Optoelectronic Science and Engineering '94
Wang Da-Heng; Anna Consortini; James B. Breckinridge, Editor(s)
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