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Proceedings Paper

Excitonic stimulated emission of ZnSe: SnS/GaAs MQWs at room temperature
Author(s): De Zen Shen; Xiwu Fan; Weibiao Wang; Baojun Yang
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Paper Abstract

Excitonic stimulated emission in the ZnSe-ZnS multiple quantum wells grown by the metal- organic chemical vapor deposition on GaAs substrates has been studied at room temperature. On the basis of the absorption spectrum and photoluminescence spectra under different excitation intensities measured, the major origin for the excitonic stimulated emissions in the ZnSe-ZnS/GaAs at room temperature obtained here are attributed to the exciton-exciton interaction.

Paper Details

Date Published: 5 August 1994
PDF: 3 pages
Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182033
Show Author Affiliations
De Zen Shen, Changchun Institute of Physics (China)
Xiwu Fan, Changchun Institute of Physics (China)
Weibiao Wang, Changchun Institute of Physics (China)
Baojun Yang, Changchun Institute of Physics (China)

Published in SPIE Proceedings Vol. 2321:
Second International Conference on Optoelectronic Science and Engineering '94
Wang Da-Heng; Anna Consortini; James B. Breckinridge, Editor(s)

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