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Proceedings Paper

Two-mode InGaSb/GaSb strained-layer superlattice infrared photodetector
Author(s): Yan-Kuin Su; S. M. Chen; C. F. Yu
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Paper Abstract

For InGaSb/GaSb strained-layer structure, the effects of elastic strain are induced by lattice mismatch on the effective masses and band offsets at (Gamma) -point. We found that the effective masses (electron, light- and heavy-hole) become anisotropic, and the band offsets are also effected in a strained layer. The E-k relations were calculated using the method of linear combination of atomic orbitals. Such a structure is, at the same time, of type I for heavy-hole and type II for light-hole. Mini-subbands in InGaSb/GaSb strained-layer superlattice have been calculated using the modified Kronig-Penney model. This strained structure can be applied as two-mode transition photoelectronic devices.

Paper Details

Date Published: 5 August 1994
PDF: 6 pages
Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994);
Show Author Affiliations
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
S. M. Chen, National Cheng Kung Univ. (Taiwan)
C. F. Yu, National Kaohsiung Institute of Technology (China)

Published in SPIE Proceedings Vol. 2321:
Second International Conference on Optoelectronic Science and Engineering '94
Wang Da-Heng; Anna Consortini; James B. Breckinridge, Editor(s)

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