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Proceedings Paper

Radiation effect in quantum well optoelectronic devices
Author(s): Bruce D. Evans; Harold E. Hager; Barrie W. Hughlock; Eric Y. Chan
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Paper Abstract

The survivability for satellite applications of two classes of quantum-well-based fiberoptic light sources was evaluated by MeV-proton space-environment simulation studies. The first was an InGaAs/GaAs strained-layer quantum-well (QW) laser; the second was a broad-band light-emitting diode (LED) based on dual asymmetric quantum wells in the InGaAs/GaAs/AlGaAs system. In contrast to earlier reports comparing bulk active-region heterostructure LEDs with similarly structured laser diodes, these QW LEDs were more tolerant of proton irradiation (-3dB power at ~3xl013 protons/cm2) than the QW lasers (- 3dB power at ~3xl012 protons/cm2). The LEDs were operated far into gain saturation with a high-loss cavity structure, while the lasers were operated in a region where gain was more sensitive to current density. Therefore, atomic displacement-related recombination sites had a greater detrimental effect upon the lasers than the LEDs. The lasers held constant slope efficiency, and current thresholds increased linearly with proton fluence, while both LED power and slope efficiency decreased with proton fluence. The degradation was similar to that predicted from a universal damage relation for GaAs electronic devices, and extends that relation to include these QW photonic devices.

Paper Details

Date Published: 8 September 1993
PDF: 21 pages
Proc. SPIE 10272, Fiber Optics Reliability and Testing: A Critical Review, 102720E (8 September 1993); doi: 10.1117/12.181369
Show Author Affiliations
Bruce D. Evans, Boeing Defense & Space Group (United States)
Harold E. Hager, Boeing Defense & Space Group (United States)
Barrie W. Hughlock, Boeing Defense & Space Group (United States)
Eric Y. Chan, Boeing Defense & Space Group (United States)

Published in SPIE Proceedings Vol. 10272:
Fiber Optics Reliability and Testing: A Critical Review
Dilip K. Paul, Editor(s)

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