Share Email Print

Proceedings Paper

Quantum well structures for integrated optoelectronics
Author(s): Dietrich W. Langer; M. Chen; Hyung G. Lee; M. Chmielowski
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The use of quantum well material resulted in speed and efficiency advantages in devices such as injection lasers and opto-electronic absorption modulators. Opto-electronic circuits need also waveguides, switches and detectors. The challenge lies further in finding suitable materials and process technologies for their integration. Because of the electric field dependence of quantum well transitions one finds an extremely strong electric field dependence of the refractive index in the vicinity of the wavelength which corresponds to the quantum well transition. This phenomenon can be exploited to make electro-refractive wave guide switches and modulators of higher speed and efficiency, operating at voltages which are comparable to those in electronic ICs.

Paper Details

Date Published: 1 July 1990
PDF: 9 pages
Proc. SPIE 1215, Digital Optical Computing II, (1 July 1990); doi: 10.1117/12.18071
Show Author Affiliations
Dietrich W. Langer, Univ. of Pittsburgh (United States)
M. Chen, Univ. of Pittsburgh (United States)
Hyung G. Lee, Univ. of Pittsburgh (United States)
M. Chmielowski, Univ. of Pittsburgh (United States)

Published in SPIE Proceedings Vol. 1215:
Digital Optical Computing II
Raymond Arrathoon, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?