Proceedings Paper
High-performance near-room-temperature 2-12 um photodetectors| Format | Member Price | Non-Member Price |
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Paper Abstract
The ultimate signal-to-noise performance of the semiconductor photodetector is limited by the statistical fluctuations of the thermal generation and recombination rates in the semiconductor. Various ways to improve the performance of photodetectors operated at near room temperature including: optimized gap/doping profile, reduced volume of the device, and the use of non- equilibrium depletion of semiconductor have been proposed. Practical 2 to 12 micrometers devices with improved performance are reported.
Paper Details
Date Published: 15 July 1994
PDF: 8 pages
Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179720
Published in SPIE Proceedings Vol. 2225:
Infrared Detectors and Focal Plane Arrays III
Eustace L. Dereniak; Robert E. Sampson, Editor(s)
PDF: 8 pages
Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179720
Show Author Affiliations
Jozef Piotrowski, Vigo System (Poland)
Published in SPIE Proceedings Vol. 2225:
Infrared Detectors and Focal Plane Arrays III
Eustace L. Dereniak; Robert E. Sampson, Editor(s)
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