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Proceedings Paper

Molecular beam epitaxy of HgCdTe for infrared focal plane arrays
Author(s): Alain Million; P. Ferret; Jean-Paul Chamonal; Gerard L. Destefanis; Pierre Nicolas; Philippe Bouchut
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Paper Abstract

Middle wavelength IR photovoltaic detectors were fabricated with HgCdTe epilayers grown by molecular beam epitaxy. The epilayers were grown on a slightly misoriented (111) B CdZnTe substrate and were twin free. Epitaxy was carried out with substrate rotation and the wavelength uniformity achieved on a 20 X 20 mm2 wafer was 0.80%. A planar photovoltaic technology was used to produce the IR photodiodes and the junction formation was obtained by ion implantation. Linear array photodiodes and 128 X 128 2D-arrays interconnected with a CCD readout circuit were achieved. RoA product values of 4.7 105 ohm cm2 were measured on diodes with a 4.7 micron cutoff wavelength at 77 K. The good homogeneity of the layer is reflected by the low value, 4.4%, of the standard deviation on the short circuit current histogram of the 2D-array.

Paper Details

Date Published: 15 July 1994
PDF: 8 pages
Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179701
Show Author Affiliations
Alain Million, LETI-CEA-Technologies Avancees (France)
P. Ferret, LETI-CEA-Technologies Avancees (France)
Jean-Paul Chamonal, LETI-CEA-Technologies Avancees (France)
Gerard L. Destefanis, LETI-CEA-Technologies Avancees (France)
Pierre Nicolas, LETI-CEA-Technologies Avancees (France)
Philippe Bouchut, LETI-CEA-Technologies Avancees (France)

Published in SPIE Proceedings Vol. 2225:
Infrared Detectors and Focal Plane Arrays III
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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