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Proceedings Paper

Highly producible HgCdTe molecular beam epitaxy growth technique using radiational substrate heating
Author(s): Tokuhito Sasaki; Naoki Oda
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Paper Abstract

Utilizing either the gallium or indium free substrate mounting technique is desirable for producing large area and high quality HgCdTe epitaxial layers. This paper reports that a conventional substrate holder was modified to handle radiational heating. This modification enables substrate rotation to obtain better layer uniformity and realizes reduction in the amount of growth process time. This paper also describes substrate temperature behavior during HgCdTe epitaxy. From the growth initiation to about 2 micrometers -thick HgCdTe growth, the temperature increase was confirmed as being due to absorption of thermal radiation from heated cells and the substrate heater. For further growth, radiation cooling occurred as well. The latter behavior was corrected by the infrared pyrometer. Crystallinity of the epilayer grown by radiational heating was comparable to that of the epilayer grown by conventional thermal conductance heating. Using this technique, both the reduction in process time and the epilayer uniformity of 0.5%((Delta) x/x) over a 2 inch wafer were achieved.

Paper Details

Date Published: 13 July 1994
PDF: 10 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179684
Show Author Affiliations
Tokuhito Sasaki, NEC Corp. (Japan)
Naoki Oda, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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