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Proceedings Paper

Direct growth of single-domain and twin-free CdTe(111)B on vicinal Si(001) by molecular beam epitaxy
Author(s): Yuanping Chen; Jean-Pierre Faurie; Sivalingam Sivananthan
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Paper Abstract

CdTe(111)B layers have been grown on Si(001) and its vicinal surface. Formation of double domains and twins is found to be related to the surface structure of the Si(001) substrate. The tilt angle and tilt direction of the misoriented Si(001) substrate play an important role in suppressing the formation of double domains and twins. A double-domain and twinned CdTe(111)B layer is always obtained, when it is grown on nominal Si(001) substrate. However, by optimizing the tilt parameters, one can consistently obtain single-domain and twin-free CdTe(111)B layers grown on slightly misoriented Si(001) substrates.

Paper Details

Date Published: 13 July 1994
PDF: 12 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179683
Show Author Affiliations
Yuanping Chen, Univ. of Illinois/Chicago (United States)
Jean-Pierre Faurie, Univ. of Illinois/Chicago (United States)
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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