A crucial aspect of process control in II-VI based device fabrication is the detailed monitoring of material properties, particularly structural quality. We have developed a method of mapping structural defects over large wafer areas using synchrotron white beam x-ray topography and have used it to characterize large area single crystal CdZnTe substrates and LPE HgCdTe epilayers grown on them. The synchrotron white beam technique produces high resolution topographic images of whole wafers regardless of long range strain, and the multiple images generated as a result of the polychromatic white beam (Laue geometry) provide an automatic defect depth profiling. The topographs reveal various types of defect structure in the CdZnTe substrates, and we have compared these topographic images to IR micrographs and x-ray rocking curve maps. Defect structures as revealed by the x-ray topographs were then followed from the CdZnTe substrates to the LPE grown HgCdTe epilayers. Epilayer topographs were also compared to conventional optical micrographs as well as with x-ray rocking curve maps. Finally, a scanning stage was constructed to topographically image large wafers and boule slabs.

Date Published: 13 July 1994
PDF: 12 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179671

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)