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Proceedings Paper

Effect of subgrain boundaries on the producibility of detector arrays fabricated on traveling heater method (THM) materials
Author(s): Y. Juravel; Avishai Kepten; Abraham Fraenkel; Eliezer Weiss; A. Marcus; N. Amir; Y. Hanin
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Paper Abstract

The traveling heater method (THM) is usually characterized by crystal defects such as grain boundaries and dislocations. The need for low cost HgCdTe FPA systems requires high photodiode yield. This demands understanding the crystal defect-diode relationships and necessitates a sorting method that is able to sort the as grown THM wafers before process according to the probability of achieving large photodiode arrays. This paper discusses the influence of crystals defects on photodiode performance and presents a sorting method which is under development. Oriented [111] THM HgCdTe crystals were grown and long wave N+P photodiode arrays were fabricated on the A (metal) face. It is found that individual or clusters of high current diodes which deviate drastically from their neighbors -- in current magnitude and in their slope on a Weibull distribution -- could be explained by a correspondence of excessive leakage and low angle sub-grain boundaries which cross the diode location. The distribution of single and multiple defects is compared to models based on isolated point defects and line defects. Yield implications of these results as a function of array design are described.

Paper Details

Date Published: 13 July 1994
PDF: 12 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179663
Show Author Affiliations
Y. Juravel, Semi-Conductor Devices (Israel)
Avishai Kepten, Semi-Conductor Devices (Israel)
Abraham Fraenkel, Semi-Conductor Devices (Israel)
Eliezer Weiss, Semi-Conductor Devices (Israel)
A. Marcus, Semi-Conductor Devices (Israel)
N. Amir, Technion--Israel Institute of Technology (Israel)
Y. Hanin, Technion--Israel Institute of Technology (Israel)

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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