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Proceedings Paper

Vertical Bridgman growth of large-diameter (Cd,Zn)Te crystals
Author(s): Greg T. Neugebauer; Rajaram Shetty; Christopher K. Ard; R. A. Lancaster; Peter W. Norton
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Paper Abstract

The manufacture of affordable second generation MCT detectors is favorably impacted by the availability of low-cost, large-area (Cd,Zn)Te substrates for LPE. We report here on our results in achieving routine production of high-quality, 4 cm X 6 cm, (Cd,Zn)Te substrates using scaled-up vertical Bridgman technology. Six kilogram ingots with diameters as large as 10 cm were produced. Substrate characteristics such as EPD, IR transmission, and precipitate morphology are reported. Substrate purity, which also impacts detector producibility, was monitored using GDMS of the starting elements, intermediate compounds, and the final ingots. Use of ultra-high purity starting materials enabled the Cu concentration in the substrate to be reduced significantly.

Paper Details

Date Published: 13 July 1994
PDF: 9 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994);
Show Author Affiliations
Greg T. Neugebauer, II-VI Inc. (United States)
Rajaram Shetty, II-VI Inc. (United States)
Christopher K. Ard, II-VI Inc. (United States)
R. A. Lancaster, LORAL Infrared and Imaging Systems, Inc. (United States)
Peter W. Norton, LORAL Infrared and Imaging Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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