As-grown bulk ZnSe material prepared by seeded physical vapor transport (SPVT) and melt- grown techniques, and N ion-implanted and heat-treated SPVT material are characterized by room-temperature Raman scattering and low-temperature photoluminescence techniques to evaluate the lattice perfection and to find the impurity and defect levels in the material. The measurements have indicated that the SPVT material is of better quality compared to the melt- grown material. The 200 keV/5 X 10¹³ cm^-2 N ion-implantation and 650 degree(s)C/10 min anneal have resulted in high intensity deep energy level peaks in the photoluminescence spectra recorded on the SPVT samples.

Date Published: 13 July 1994
PDF: 7 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179655

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)