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Proceedings Paper

Photoluminescence and Raman scattering characterization of As-grown and implanted bulk ZnSe crystals
Author(s): Mulpuri V. Rao; Jaime A. Freitas Jr.; Harry B. Dietrich; Alok K. Berry; J. Vellanki; Nibir K. Dhar
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Paper Abstract

As-grown bulk ZnSe material prepared by seeded physical vapor transport (SPVT) and melt- grown techniques, and N ion-implanted and heat-treated SPVT material are characterized by room-temperature Raman scattering and low-temperature photoluminescence techniques to evaluate the lattice perfection and to find the impurity and defect levels in the material. The measurements have indicated that the SPVT material is of better quality compared to the melt- grown material. The 200 keV/5 X 1013 cm-2 N ion-implantation and 650 degree(s)C/10 min anneal have resulted in high intensity deep energy level peaks in the photoluminescence spectra recorded on the SPVT samples.

Paper Details

Date Published: 13 July 1994
PDF: 7 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179655
Show Author Affiliations
Mulpuri V. Rao, George Mason Univ. (United States)
Jaime A. Freitas Jr., SFA, Inc. (United States)
Harry B. Dietrich, Naval Research Lab. (United States)
Alok K. Berry, George Mason Univ. (United States)
J. Vellanki, George Mason Univ. (United States)
Nibir K. Dhar, Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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