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Proceedings Paper

High-quality ZnSe on GaAs grown by metalorganic chemical vapor deposition (MOCVD) using diethylzinc (DEZn) and diethyselenide (DESe)
Author(s): Jyh-Chia Chen; Bing Yang; Alph Fred Semendy; William W. Clark III; Phillip R. Boyd; Neal Bambha
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Paper Abstract

In this work, we study the growth parameters of ZnSe on GaAs by MOCVD and characterize the epilayers by various techniques. Epilayers were grown using diethylzinc (DEZn) and diethylselenide (DESe) as source materials. Growth studies were done at 400 degree(s)C under different growth conditions in an atmospheric pressure MOCVD reactor. Different DESe to DEZn ratios (from 0.5 to 5) were used to study the effects of VI/II ratio on ZnSe quality. The as-grown ZnSe epilayers were characterized by double crystal x-ray diffraction, transmission electron microscope (TEM), and scanning electron microscope. The results show excellent surface morphology and crystal quality of ZnSe. The best material was grown on undoped GaAs at the VI/II ratio near unity. The full-width-at-half-maximum of ZnSe (approximately 0.5 micrometers thick) x-ray peak as low as 90 arc seconds was achieved. To our knowledge, this is the narrowest peak among the reported results of ZnSe on GaAs. TEM results also show very low defect density. ZnSe epilayer with low stacking faults density (less than 105/cm2) and large spacing between misfit dislocations (approximately micrometers ) were grown on GaAs.

Paper Details

Date Published: 13 July 1994
PDF: 5 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179654
Show Author Affiliations
Jyh-Chia Chen, Univ. of Maryland/Baltimore County (United States)
Bing Yang, Univ. of Maryland/Baltimore County (United States)
Alph Fred Semendy, Army Research Lab. (United States)
William W. Clark III, Army Research Lab. (United States)
Phillip R. Boyd, Army Research Lab. (United States)
Neal Bambha, Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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