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Transmission electrom microscopy (TEM) defect studies of molecular beam epitaxy (MBE) grown ZnSxSe1-x/GaAs interface
Author(s): Li-Hsin Kuo; Lourdes Salamanca-Riba; G. E. Hofler; Bor-Jen Wu; Michael A. Haase
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Paper Abstract

Both Shockley and Frank partial dislocations originating at the ZnSxSe1-x/GaAs interface were observed with defect densities in the range less than 5 X 104/cm2 to approximately 1 X 108/cm2 for samples grown under different conditions. These faulted defects act as heterogeneous nucleation sites for the generation of 60 degree(s) misfit dislocations. A very low density of Shockley partial dislocations was obtained in ZnSxSe1-x films grown by the layer-by-layer mode on GaAs substrates. Also, the density of Frank partial dislocations was decreased by exposing the As- stabilized GaAs surface to Zn for 1-2 minutes prior to the growth of the ZnSxSe1-x epilayers. These samples contained a defect density lower than 5 X 104/cm2. A Ga2Se3 compound existing at the ZnSxSe1-x/GaAs interface is thought to be the source of the Frank partial dislocations.

Paper Details

Date Published: 13 July 1994
PDF: 9 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179653
Show Author Affiliations
Li-Hsin Kuo, Univ. of Maryland/College Park (United States)
Lourdes Salamanca-Riba, Univ. of Maryland/College Park (United States)
G. E. Hofler, 3M Photonics Research Lab. (United States)
Bor-Jen Wu, 3M Photonics Research Lab. (United States)
Michael A. Haase, 3M Photonics Research Lab. (United States)

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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