(100) composition modulation as well as (101) and (101) tweed strain contrast were observed in Zn_1-xMg_xS_ySe_1-y epitaxial films grown on ZnSe buffer layers. Surface buckling of the TEM plan-view specimens along the (110) direction is induced by the modulated structure in the Zn_1-xMg_xS_ySe_1-y films. High quality Zn_1-xMg_xS_ySe_1-y films were obtained by growing a ZnSe buffer layer on As-stabilized GaAs substrates with Zn treatment of the substrate prior to the growth of the film. In these samples, no vacancy-contained Ga₂Se₃ interfacial layer was found at the ZnSe/GaAs interface. Samples with rough ZnSe/GaAs interfaces contained a high density of Frank partial dislocations originating at the ZnSe/GaAs interface. The interface roughness is believed to result from an As-rich GaAs surface after the oxide desorption.

Date Published: 13 July 1994
PDF: 10 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179652

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)