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Proceedings Paper

Cation impurity interactions in Hg1-xCdxTe
Author(s): Jose L. Melendez; C. Robert Helms; John H. Tregilgas; Jerome L. Elkind
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Paper Abstract

Cation impurity gettering in Hg1-xCdxTe is described in the context of kinetic process models which include the interactions of the impurities and the dominant native point defects. Experimental results are presented using SIMS profiles of Au distributions in Hg0.8Cd0.2Te following Hg anneals and ion mills, which are processes known to inject excess Hg interstitials. In either process, Au is shown to redistribute preferentially to high vacancy regions. The junction depth of the low to high Au transition is determined by SIMS. For Hg rich anneals of Au-doped, high vacancy concentration material, the Au junction behavior with respect to anneal temperature, time, and initial vacancy concentration is shown to follow that expected for type converted electrical junctions in vacancy-only material. For milled Au-doped material with a high vacancy concentration, the Au junction depths are found to be approximately proportional to the amount of material removed. Neither the Hg anneals nor the mills form Au junctions in starting material with a low background vacancy concentration.

Paper Details

Date Published: 13 July 1994
PDF: 12 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179650
Show Author Affiliations
Jose L. Melendez, Stanford Univ. (United States)
C. Robert Helms, Stanford Univ. (United States)
John H. Tregilgas, Texas Instruments Inc. (United States)
Jerome L. Elkind, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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