Recent developments in MOCVD growth of Hg_1-xCd_xTe photodiodes using the interdiffused multilayer process are reported. Iodine doping of HgCdTe is described using ethyl iodide. Using ethyl iodide, the iodine doping level can be controlled in the range of 7 X 10¹⁴ - 2 X 10¹⁸ cm^-3 without any memory effect. Activation of the iodine as a singly ionized donor is near 100% at concentrations < 1 X 10¹⁷ cm^-3. Ethyl iodide was not found to react with the other organometallic precursors and abrupt dopant profiles are obtained. The iodine doped HgCdTe films exhibit 80 K electron mobilities >= 1 X 10⁵ cm²/V-s, auger limited lifetimes of approximately 1 microsecond(s) for concentrations of (1-3)X10¹⁵ cm^-3, and x-values approximately 0.22. LWIR p-on-n heterojunctions have been grown in situ using iodine doping for the n-type absorber layer and arsenic doping for the p- type cap layer. Detailed characterization data for the photodiodes are reported.

Date Published: 13 July 1994
PDF: 10 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179649

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)