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Proceedings Paper

Semiconductor microcavity lasers
Author(s): Paul Lee Gourley; Joel R. Wendt; G. Allen Vawter; Mial E. Warren; Thomas M. Brennan; B. Eugene Hammons
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Paper Abstract

New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3D architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures that have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

Paper Details

Date Published: 30 June 1994
PDF: 15 pages
Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178523
Show Author Affiliations
Paul Lee Gourley, Sandia National Labs. (United States)
Joel R. Wendt, Sandia National Labs. (United States)
G. Allen Vawter, Sandia National Labs. (United States)
Mial E. Warren, Sandia National Labs. (United States)
Thomas M. Brennan, Sandia National Labs. (United States)
B. Eugene Hammons, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 2146:
Physics and Simulation of Optoelectronic Devices II
Weng W. Chow; Marek Osinski, Editor(s)

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