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Proceedings Paper

Microscopic treatment of heterolayer transport
Author(s): Muhammad A. Alam; Mark S. Lundstrom
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Paper Abstract

Rigorous techniques to treat electron transport in heterojunction and quantum well devices are described. A scattering matrix approach, which solves the space-dependent, steady-state Boltzmann equation is described along with a transition matrix approach to treat the time-dependent processes in quantum wells. Ultimately, these two techniques can be combined to provide a rigorous and comprehensive treatment of heterojunction and quantum well devices. The objective is to understand the role of heterostructures in semiclassical devices and to illuminate the merits and shortcomings of standard current transport theories of such structures.

Paper Details

Date Published: 30 June 1994
PDF: 10 pages
Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178500
Show Author Affiliations
Muhammad A. Alam, AT&T Bell Labs. (United States)
Mark S. Lundstrom, Purdue Univ. (United States)


Published in SPIE Proceedings Vol. 2146:
Physics and Simulation of Optoelectronic Devices II
Weng W. Chow; Marek Osinski, Editor(s)

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