Results are presented of a process-development effort to achieve a 1-Mrad silicon (Si) radiation-hardening capability at temperatures down to 40 K, using Texas Instruments high volume, 1-micrometer commercial process. The one-micrometer process was characterized at 77 K and 40 K: radiation effects on the baseline SiO₂ gate dielectric and N-channel field effect transistor edges were observed, as were freeze-out and hot-carrier effects of the lightly doped drain implants. These freeze-out phenomena were confirmed, using SUPREM, MINIMOS, and MEDICI. The simulated data compared favorably with measured results. Simulations were run, using various implant doses and profiles to eliminate the freeze-out and hot-carrier effects in the new process. Devices having these simulated profiles were processed, and the results are presented.

Date Published: 23 June 1994
PDF: 13 pages
Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178494

Published in SPIE Proceedings Vol. 2226:
Infrared Readout Electronics II
Eric R. Fossum, Editor(s)