Drain voltages of a test structure of dual gate MOS-JFET CCD (TIJ J032) were measured by an advanced laser scanner. The potential variation of the test structure at various source and gate voltages were measured by monitoring drain voltages with respect to the scanning laser position. In this report, a fine continuous, constant energy He-Ne laser beam of the Multipurpose Microelectronic Advanced Laser Scanner is utilized for the characterization of local variation of the sensor performance within the test structure.

Date Published: 23 June 1994
PDF: 9 pages
Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178488

Published in SPIE Proceedings Vol. 2226:
Infrared Readout Electronics II
Eric R. Fossum, Editor(s)