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Proceedings Paper

Hole trapping in MOSFET by hot carrier stressing and ionizing irradiation at 77K
Author(s): Naresh C. Das
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Paper Abstract

Hole trapping phenomena by substrate hot carrier (SHC) stressing and ionizing radiation are compared. Similar effects on device characteristics such as transconductance change, threshold voltage (Vt) shift etc due to SHC stressing and ionizing radiation are observed. Less radiation induced Vt shift is observed for SHC stressed device than that due to virgin device. Though the hole traps due to SHC stressing and ionizing irradiation anneal with applied field, their annealing behavior is markedly different. It is due to the fact that the hole trap distribution is different for SHC stressing condition than that due to ionizing irradiation.

Paper Details

Date Published: 23 June 1994
PDF: 5 pages
Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178472
Show Author Affiliations
Naresh C. Das, Air Force Phillips Lab. (United States)

Published in SPIE Proceedings Vol. 2226:
Infrared Readout Electronics II
Eric R. Fossum, Editor(s)

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