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Proceedings Paper

Fabrication of high-performance GaAs/AlGaAs optical phase modulators for microwave/photonic integrated circuits
Author(s): Stanley H. Kravitz; G. Allen Vawter; Vincent M. Hietala; Morris Burt Snipes Jr.; Marcelino G. Armendariz; Richard Franklin Carson; B. Eugene Hammons; Ronald E. Leibenguth
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Paper Abstract

A high-speed distributed electrode phase modulator has been designed and fabricated. The processing of this device presented many challenges: (1) smooth rib waveguides etched to an accuracy of +/- 200angstroms; (2) polyimide planarization of 5micrometers step heights, with vias patterned as small as 1.6 micrometers ; (3) contact metalization with resistivities as low as 1 X 10-6(Omega) -cm2; (4) coplanar n and p gold contacts 2.5 micrometers thick, with a 0.5 micrometers gap between contacts; (5) ion- implantation to achieve both electrical and optical isolation. A brief description of how each of these processes have been accomplished will be presented. The epitaxial growth structure of this device will be discussed, including SEM cross-sections of the completed device.

Paper Details

Date Published: 10 June 1994
PDF: 7 pages
Proc. SPIE 2155, Optoelectronic Signal Processing for Phased-Array Antennas IV, (10 June 1994); doi: 10.1117/12.177393
Show Author Affiliations
Stanley H. Kravitz, Sandia National Labs. (United States)
G. Allen Vawter, Sandia National Labs. (United States)
Vincent M. Hietala, Sandia National Labs. (United States)
Morris Burt Snipes Jr., Sandia National Labs. (United States)
Marcelino G. Armendariz, Sandia National Labs. (United States)
Richard Franklin Carson, Sandia National Labs. (United States)
B. Eugene Hammons, Sandia National Labs. (United States)
Ronald E. Leibenguth, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2155:
Optoelectronic Signal Processing for Phased-Array Antennas IV
Brian M. Hendrickson, Editor(s)

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