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Proceedings Paper

Measurement of ion-induced damage profiles in GaAs using modulation spectroscopy
Author(s): Michael Gal; P. Kraisingdecha; Chit Shwe
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Paper Abstract

We demonstrate the possibility of measuring the depth distribution of damage in GaAs using differential reflectance spectroscopy. Damage was intentionally generated by various ion- assisted processes, such as ion implantation and ion-assisted plasma etching. The high sensitivity of the techniques allowed us to measure damage profiles over a large range of ion energies and ion doses.

Paper Details

Date Published: 26 May 1994
PDF: 8 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994);
Show Author Affiliations
Michael Gal, Univ. of New South Wales (Australia)
P. Kraisingdecha, Univ. of New South Wales (Australia)
Chit Shwe, Univ. of New South Wales (Australia)


Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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