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Proceedings Paper

Investigation of doped multiple quantum well structures using modulation spectroscopy
Author(s): Rudiger Goldhahn; Gerhard Gobsch; J. Martyn Chamberlain; Mohamed Henini; Andrzej F. Jezierski; N. Stein; M. Trott; V. Nakov
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Paper Abstract

We have studied the influence of silicon doping on the electric-field-induced Stark shifts of the subband states for AlGaAs/GaAs/AlGaAs multiple quantum well structures. The investigations were performed applying electroreflectance (ER), photoreflectance (PR), and for comparison photoluminescence (PL) spectroscopy. The analysis of the PR spectra yields the transition energies at approximately zero electric field, which are in good agreement with PL peaks. The shift of the Er ground state heavy hole transition with respect t the PR data and accompanying self-consistent calculations allow the determination of the field strength F at each gate voltage with high accuracy. On this bases, the other transitions can be identified by their expected shift. It will be shown that all transitions involving the first heavy hole subband show a strong increase of their signals with increasing field strength. The plot of F2 versus gate voltage for both samples fits a straight line, slope of which provides the corresponding concentrations of the ionized donors.

Paper Details

Date Published: 26 May 1994
PDF: 8 pages
Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176861
Show Author Affiliations
Rudiger Goldhahn, Technische Univ. Ilmenau (Germany)
Gerhard Gobsch, Technische Univ. Ilmenau (Germany)
J. Martyn Chamberlain, Univ. of Nottingham (United Kingdom)
Mohamed Henini, Univ. of Nottingham (United Kingdom)
Andrzej F. Jezierski, Univ. of Glasgow (United Kingdom)
N. Stein, Technische Univ. Ilmenau (Germany)
M. Trott, Technische Univ. Ilmenau (Germany)
V. Nakov, Technische Univ. Ilmenau (Germany)

Published in SPIE Proceedings Vol. 2141:
Spectroscopic Characterization Techniques for Semiconductor Technology V
Orest J. Glembocki, Editor(s)

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