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Proceedings Paper

Lasers for large modulation bandwidth and low-threshold applications
Author(s): Pallab Bhattacharya; L. Davis; H. C. Sun; Hosung Yoon; Sanjay Sethi; J. Shuttlewood; Igor Vurgaftman; Jasprit Singh
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Paper Abstract

Carrier transport and recombination dynamics are seen to be the intrinsic limitations to the performance of quantum well lasers. The carrier relaxation times as a function of quantum well width were measured in laser structures using a streak camera. Auger recombination rates were experimentally determined in compressively strained InxGa1-xAs/InGaAsP/InP quantum wells from the large signal modulation of single mode lasers. In order to overcome the intrinsic limitations in present semiconductor laser designs, a new device concept has been demonstrated: the tunneling injection quantum well laser, in which the carriers are injected into the active lasing subband by resonant and sequential tunneling. The highest 3 dB modulation bandwidth (12.5 GHz) and the highest differential gain (6 X 10-16 cm2) for a single quantum well laser have already been demonstrated. To realize threshold currents of much less than 1 mA, quantum wire lasers are required. We present theoretical and experimental results on the performance characteristics of quantum wire lasers. The experimental structures are being realized in the InxGa1-xAs/GaAs system by MBE growth and regrowth and electron beam lithography.

Paper Details

Date Published: 1 June 1994
PDF: 12 pages
Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176618
Show Author Affiliations
Pallab Bhattacharya, Univ. of Michigan (United States)
L. Davis, Univ. of Michigan (United States)
H. C. Sun, Univ. of Michigan (United States)
Hosung Yoon, Univ. of Michigan (South Korea)
Sanjay Sethi, Univ. of Michigan (United States)
J. Shuttlewood, Univ. of Michigan (United States)
Igor Vurgaftman, Univ. of Michigan (United States)
Jasprit Singh, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 2148:
Laser Diode Technology and Applications VI
Pei Chuang Chen; Lawrence A. Johnson; Henryk Temkin, Editor(s)

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