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Proceedings Paper

Optimization of 670-nm strained quantum well laser diodes
Author(s): Peter M. Smowton; Huw D. Summers; Paul C. T. Rees; Peter Blood
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Paper Abstract

There is increasing interest in the use of visible emitting (formula available in paper) quantum well lasers for optical interconnections using polymer waveguides and this calls for the optimization of device structure for operation at a specific wavelength and usually at an elevated temperature. We concentrate on the mechanisms by which compressive strain modifies the threshold current in a regime where well composition (x) (strain) and quantum well width are adjusted to maintain a transition wavelength of 670 nm. In our model we assume a parabolic band structure, which is a reasonable approximation in this case since strain enhanced splitting of the valence bands is large, and we include the effects of monolayer fluctuations in well width and carrier-carrier scattering (where we calculate an energy and carrier density dependent lifetime). Using our model we examine the relative merits of various well composition (x)/well width combinations.

Paper Details

Date Published: 1 June 1994
PDF: 12 pages
Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176614
Show Author Affiliations
Peter M. Smowton, Univ. of Wales (United Kingdom)
Huw D. Summers, Univ. of Wales (United Kingdom)
Paul C. T. Rees, Univ. of Wales (United States)
Peter Blood, Univ. of Wales (United Kingdom)

Published in SPIE Proceedings Vol. 2148:
Laser Diode Technology and Applications VI
Pei Chuang Chen; Lawrence A. Johnson; Henryk Temkin, Editor(s)

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