Share Email Print
cover

Proceedings Paper

Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition
Author(s): Hanmin Zhao; Michael H. MacDougal; Kushant Uppal; Newton C. Frateschi; Paul Daniel Dapkus; Sabeur Siala; Richard N. Nottenburg
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Low threshold current single quantum well InGaAs/GaAs lasers are fabricated by metalorganic chemical vapor deposition on a nonplanar substrate. By taking advantage of the growth rate and doping differences on different crystal facets during the growth, an almost- buried heterostructure laser is made by a single growth step. Threshold currents as low as 1.0 mA under pulsed operation and 1.2 mA under continuous-wave operation are obtained for uncoated lasers at room-temperature. The lasers showed high external quantum efficiency (80%). High reflection coated laser (95%/95%) has a cw threshold current as low as 0.28 mA.

Paper Details

Date Published: 1 June 1994
PDF: 8 pages
Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176612
Show Author Affiliations
Hanmin Zhao, Univ. of Southern California (United States)
Michael H. MacDougal, Univ. of Southern California (United States)
Kushant Uppal, Univ. of Southern California (United States)
Newton C. Frateschi, Univ. of Southern California (United States)
Paul Daniel Dapkus, Univ. of Southern California (United States)
Sabeur Siala, Univ. of Southern California (United States)
Richard N. Nottenburg, Univ. of Southern California (United States)


Published in SPIE Proceedings Vol. 2148:
Laser Diode Technology and Applications VI
Pei Chuang Chen; Lawrence A. Johnson; Henryk Temkin, Editor(s)

© SPIE. Terms of Use
Back to Top