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Proceedings Paper

Low-temperature operating characteristics of 2.0-um strained InGaAs lasers
Author(s): Ramon U. Martinelli; Raymond J. Menna; Gregory H. Olsen
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Paper Abstract

Fabry-Perot and distributed-feedback emission from strained InGaAs/InP quantum well lasers has been examined over a temperature range of 100 K to 315 K. The active layer contains two 12 nm wide In0.75Ga0.25As quantum wells. Fabry-Perot lasers, operating at 39 degree(s)C, showed cw emission at 2.0 micrometers . A threshold current of 40 mA and an external differential quantum efficiency of 10% were measured from a laser with 6 mW of cw light output. A linear wavelength tuning rate of 0.72 nm/K was measured from 100 K to 300 K. The characteristic temperature, To, of the threshold current, exhibits an abrupt decrease at 250 K, from To equals 136 K to To equals 56 K. A similar decrease in the characteristic temperature of the external differential quantum efficiency is observed. The decrease in To values at 250 K indicates the onset of an additional loss mechanism. Distributed feedback lasers were fabricated from the same wafer. They showed single mode output from 190 to 300 K with a side-mode-suppression ratio of about 20 dB. The wavelength was 1.95 micrometers at 0 degree(s)C and tuned at a rate of 0.13 nm/K. The current-tuning rate was -340 MHz/mA.

Paper Details

Date Published: 1 June 1994
PDF: 8 pages
Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176611
Show Author Affiliations
Ramon U. Martinelli, David Sarnoff Research Ctr. (United States)
Raymond J. Menna, David Sarnoff Research Ctr. (United States)
Gregory H. Olsen, Sensors Unlimited, Inc. (United States)

Published in SPIE Proceedings Vol. 2148:
Laser Diode Technology and Applications VI
Pei Chuang Chen; Lawrence A. Johnson; Henryk Temkin, Editor(s)

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