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Proceedings Paper

Advances in quantum well heterostructure lasers: strained-layer buried heterostructure lasers by selective-area epitaxy
Author(s): James J. Coleman; Timothy M. Cockerill; David V. Forbes; J. A. Dantzig
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Paper Abstract

Strained-layer InxGa1-xAs-GaAs-AlyGa1-yAs buried heterostructure (BH) quantum well lasers have been fabricated using three-step selective-area atmospheric pressure metalorganic chemical vapor deposition. Selective-area epitaxy is used to produce BH lasers involving only GaAs on GaAs regrowth, eliminating the detrimental effects associated with exposed AlyGa1-yAs found in other fabrication methods. Additionally, selective-area epitaxy provides in-plane bandgap energy control to fabricate BH devices with different wavelengths on the same wafer.

Paper Details

Date Published: 1 June 1994
PDF: 5 pages
Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176610
Show Author Affiliations
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)
Timothy M. Cockerill, Univ. of Illinois/Urbana-Champaign (United States)
David V. Forbes, Univ. of Illinois/Urbana-Champaign (United States)
J. A. Dantzig, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 2148:
Laser Diode Technology and Applications VI
Pei Chuang Chen; Lawrence A. Johnson; Henryk Temkin, Editor(s)

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