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Proceedings Paper

Monolithic integration of a semiconductor preamplifier with a semiconductor tapered power amplifier
Author(s): Ping-Hui S. Yeh; I.-Fan Wu; Shijun Jiang; Mario Dagenais
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Paper Abstract

Recent progress on the monolithic integration of an index-guided single-lateral-mode preamplifier with a tapered semiconductor optical amplifier is reported. The suppression of the amplified spontaneous emission as a function of coupled input power and bias current is studied. With a coupled input power of only 1.2 mW, more than 1 W amplified output power is obtained at 810 nm, corresponding to 29-dB internal large-signal gain. The far-field pattern is dominated by a diffraction-limited single lobe. A new self-aligned dissipating grid, which improves the amplified- signal-to-total-output-power ratio from 72% to over 85%, is described.

Paper Details

Date Published: 1 June 1994
PDF: 8 pages
Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176604
Show Author Affiliations
Ping-Hui S. Yeh, Univ. of Maryland/College Park (United States)
I.-Fan Wu, Univ. of Maryland/College Park (United States)
Shijun Jiang, Univ. of Maryland/College Park (United States)
Mario Dagenais, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 2148:
Laser Diode Technology and Applications VI
Pei Chuang Chen; Lawrence A. Johnson; Henryk Temkin, Editor(s)

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