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Proceedings Paper

Damping of charge oscillations in double-well structures by the Coulomb interaction
Author(s): Mihael Ziger; Walter Poetz; P. Kocevar
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Paper Abstract

We present results of a theoretical study of tunneling of laser-generated conduction-band electrons between two adjacent GaAs-AlGaAs quantum wells. Carriers are excited in the left well by a suitable sub-picosecond laser pulse. Damping of ensuing charge oscillations due to the electron-electron interaction is studied within the density-matrix formalism. A tractable set of generalized Boltzmann equations is derived which accounts for carrier generation, an exact treatment of the tunneling process, and the Coulomb interaction between electrons within the adiabatic (scattering) approximation. A detailed study of the evolution of the electron distribution is presented. We have found that, depending on structural parameters and excitation levels, the Coulomb interaction provides an efficient agent to destroy phase coherence in the system and to drive the system back towards equilibrium.

Paper Details

Date Published: 6 May 1994
PDF: 12 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175909
Show Author Affiliations
Mihael Ziger, Univ. Graz (Austria)
Walter Poetz, Univ. of Illinois/Chicago (United States)
P. Kocevar, Univ. Graz (Austria)

Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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