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Proceedings Paper

Relevant intrinsic parameters for the dynamics of high-speed InGaAs/InGaAsP quantum-well-distributed feedback lasers
Author(s): Janos Kovac; Heinz Schweizer; H. Schmidt; Christiane Kaden; M. Klenk; R. Weinmann; E. Zielinski
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Paper Abstract

High frequency modulation properties of distributed feedback (DFB) lasers are analyzed by optical excitation with picosecond pulses. Typical time constants of the large signal response were investigated. Measurements at different temperatures demonstrate that capture of carriers from the adjacent barrier energy levels into the active region of the laser are dominant mechanisms for laser dynamics. This carrier transfer consists of the intrinsic processes of carrier-carrier scattering, carrier energy relaxation, carrier diffusion, and quantum mechanical capture of carriers into the quantum wells. In order to separate the limiting processes for laser speed, the influence of relaxation processes from different energy levels on the device response was tested by varying the wavelength of the excitation pulse. To investigate modulation limitations due to intrinsic band structure parameters, the laser emission wavelength was detuned against the gain spectrum by varying the grating period of a DFB laser. Longer time constants at higher wavelengths demonstrate that the differential gain constant is the most important contribution for modulation speed. A theoretical description based on a 3 level system model yields rate equations which explain our experimental results.

Paper Details

Date Published: 6 May 1994
PDF: 10 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175905
Show Author Affiliations
Janos Kovac, Univ. Stuttgart (Germany)
Heinz Schweizer, Univ. Stuttgart (Germany)
H. Schmidt, Univ. Stuttgart (Germany)
Christiane Kaden, Univ. Stuttgart (Germany)
M. Klenk, Alcatel-SEL (Germany)
R. Weinmann, Alcatel-SEL (Germany)
E. Zielinski, Alcatel-SEL (Germany)

Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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