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Proceedings Paper

Optical rectification and terahertz emission in the semiconductors excited above the bandgap
Author(s): Jacob B. Khurgin
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Paper Abstract

A rigorous theory of the optical rectification in the zinc-blende semiconductors is developed. This theory combines the bonding orbitals representation of the electrons in the semiconductor with the band structure representation. It is shown that when the semiconductor is excited above the absorption edge there is a strong resonant enhancement of the optical rectification signal and connected with it emission of the terahertz radiation. Both the magnitude and the temporal characteristics of this signal are closely related to the intraband relaxation processes in the valence band.

Paper Details

Date Published: 6 May 1994
PDF: 13 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175894
Show Author Affiliations
Jacob B. Khurgin, The Johns Hopkins Univ. (United States)

Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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