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Proceedings Paper

High-field electron transport in GaAs: a picosecond time-resolved Raman probe
Author(s): Eric D. Grann; Shou Jong Sheih; C. Chia; Kong-Thon F. Tsen; Otto F. Sankey; George N. Maracas; R. Droopad; Arnel A. Salvador; Andrei Botchkarev; Hadis Morkoc
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Paper Abstract

Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T approximately equals 80 K. For an injected carrier density of n approximately equals 2.2 X 1018 cm-3 and electric field intensity E equals 25 KV/cm, the drift velocity of electrons as high as Vd equals 2.5 X 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.

Paper Details

Date Published: 6 May 1994
PDF: 8 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175890
Show Author Affiliations
Eric D. Grann, Arizona State Univ. (United States)
Shou Jong Sheih, Arizona State Univ. (United States)
C. Chia, Arizona State Univ. (United States)
Kong-Thon F. Tsen, Arizona State Univ. (United States)
Otto F. Sankey, Arizona State Univ. (United States)
George N. Maracas, Arizona State Univ. (United States)
R. Droopad, Arizona State Univ. (United States)
Arnel A. Salvador, Univ. of Illinois/Urbana-Champaign (Philippines)
Andrei Botchkarev, Univ. of Illinois/Urbana-Champaign (United States)
Hadis Morkoc, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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