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Proceedings Paper

Laser-induced bandgap collapse in GaAs
Author(s): Y. Siegal; Eli N. Glezer; Li Huang; Eric Mazur
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Paper Abstract

We present recent time-resolved measurements of the linear dielectric constant of GaAs at 2.2 eV and 4.4 eV following femtosecond laser pulse excitation. In sharp contrast to predictions based on the widely used Drude model, the data show an interband absorption peak coming into resonance first with the 4.4 eV probe photon energy and then with the 2.2 eV probe photon energy, indicating major changes in the band structure. The time scale for these changes ranges from within 100 fs to a few picoseconds, depending on the incident pump pulse fluence.

Paper Details

Date Published: 6 May 1994
PDF: 12 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175886
Show Author Affiliations
Y. Siegal, Harvard Univ. (United States)
Eli N. Glezer, Harvard Univ. (United States)
Li Huang, Harvard Univ. (United States)
Eric Mazur, Harvard Univ. (United States)

Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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