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Proceedings Paper

Internal thermalization of the electron-hole plasma in the subpicosecond regime in GaAs
Author(s): S. Hunsche; H. Heesel; A. Ewertz; Heinrich Kurz; Jacques H. Collet
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Paper Abstract

We report new experimental results on the internal thermalization of the electron-hole plasma (EHP) in bulk GaAs. Time-resolved differential transmission spectra have been systematically studied for different pump photon energies (1.45 eV < $HBAR(omega) < 1.51 eV) and different excitation intensities. The experimental data demonstrate that the plasma thermalization is achieved within a stable interval of 150 - 200 fs for plasma densities ranging from 2 X 1017 to 2 X 1018/cm3. Experimental results are in good agreement with the thermalization times deduced from plasma dynamics calculations using dynamic screening of the interactions in the framework of Boltzmann's equations.

Paper Details

Date Published: 6 May 1994
PDF: 10 pages
Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175882
Show Author Affiliations
S. Hunsche, RWTH Aachen (Germany)
H. Heesel, RWTH Aachen (Germany)
A. Ewertz, RWTH Aachen (Germany)
Heinrich Kurz, RWTH Aachen (Germany)
Jacques H. Collet, Lab. de Automatique et d'Analyse des Systems du CNRS (France)

Published in SPIE Proceedings Vol. 2142:
Ultrafast Phenomena in Semiconductors
David K. Ferry; Henry M. van Driel, Editor(s)

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