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Proceedings Paper

Comparative study of x-ray lithography process optimization using theoretical and empirical tools
Author(s): Whitson G. Waldo; Cristiano Capasso; Azalia A. Krasnoperova; Mumit Khan; James Welch Taylor; Franco Cerrina
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Paper Abstract

This paper presents the results of a simple orthogonal matrix experiment testing photoresist performance as a function of post exposure bake temperature and time. The dose latitude of quarter micron line/space pairs is found under these conditions. These empirical results are compared against those produced under identical process conditions but utilizing simulated images based on resist dissolution rate data. The matrix responses of the empirical and simulated data sets are compared. Also, these linewidth results are compared against resist characteristic data produced under identical process conditions. The matrix responses of the three data sets are compared.

Paper Details

Date Published: 13 May 1994
PDF: 12 pages
Proc. SPIE 2194, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV, (13 May 1994); doi: 10.1117/12.175833
Show Author Affiliations
Whitson G. Waldo, Motorola Inc. (United States)
Cristiano Capasso, Univ. of Wisconsin/Madison (United States)
Azalia A. Krasnoperova, Univ. of Wisconsin/Madison (United States)
Mumit Khan, Univ. of Wisconsin/Madison (United States)
James Welch Taylor, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 2194:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV
David O. Patterson, Editor(s)

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